Extremely high electron mobility of pseudomorphic InGa As/InAlAs modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy
Applied Physics Letters, ISSN: 0003-6951, Vol: 85, Issue: 18, Page: 4043-4045
2004
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Article Description
Much enhanced electron mobility of 105 000 cm/V s with a high sheet electron concentration (N) of 3.1 × 10 cm was obtained at 77 K in pseudomorphic InGa As/InAlAs modulation-doped quantum well (MD-QW) grown on a (411)A InP substrate by molecular-beam epitaxy. This MD-QW has the "(411)A super-flat interfaces" (effectively atomically flat interfaces over a wafer-size area), which leads to significant reduction of interface roughness scattering at low temperatures. The highest electron mobility of the (411)A MD-QW was achieved by using pseudomorphic In AlAs barriers. The electron mobility is 44% higher than that (73 000 cm/V s at 77 K) of a similar MD-QW structure grown on a conventional (100)InP substrate. © 2004 American Institute of Physics.
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