Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density
Journal of Applied Physics, ISSN: 0021-8979, Vol: 97, Issue: 7
2005
- 21Citations
- 15Captures
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Article Description
The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds. © 2005 American Institute of Physics.
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