Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor GaO
Applied Physics Letters, ISSN: 0003-6951, Vol: 88, Issue: 9
2006
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- 123Captures
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Article Description
Epitaxial films of a deep-ultraviolet transparent oxide semiconductor, Ga2 O3, were fabricated on α- Al2 O3 (0001) substrates by pulsed laser deposition. Four-axes x-ray diffraction measurements revealed that the tin-doped Ga2 O3 films have a crystal structure different from any known polymorphs of Ga2 O3. Its crystal lattice was determined to be an orthorhombic. Top gate field-effect transistor structures were fabricated using the Ga2 O3 epitaxial films for n -channels. The channel conductance was modulated by an order of magnitude by gate voltage at room temperature with an estimated field-effect mobility of 5× 10-2 cm2 (V s) -1. © 2006 American Institute of Physics.
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