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Hydrogen-implant-induced polarization loss and recovery in lrO /Pb(Zr,Ti)O/Pt capacitors

Journal of Applied Physics, ISSN: 0021-8979, Vol: 99, Issue: 12
2006
  • 12
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Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    5

Article Description

Hydrogen was implanted into IrO (200 nm)/Pb(Zr,Ti)O /Pt thin film capacitors at 26 keV with a flux of 2× 10 H ions/cm and also implanted at 20 keV with a flux of 1 ×10 H ions/cm into IrO (50 nm)/Pb(Zr,Ti)O/Pt. The implanted samples showed a net loss in polarization of 20 μC/cm as a result of the hydrogen implant and the hysteresis loop was severely distorted. Transmission electron microscopy cross-sectional images and microdiffraction patterns showed no physical damage in the Pb(Zr,Ti)O after implanting. Secondary ion mass spectroscopy (SIMS) analysis revealed that a maximum concentration of H of 4 × 10 atom/cm after implantation. Permittivity measurements also showed a decrease after implantation of 20% or more. After annealing the implanted samples in air at 350 °C for 5 min the remanent polarization loop and dielectric properties were restored. SRIM-2003 software simulation of the implanted hydrogen revealed that 1% oxygen vacancies are created by implanting using these implant conditions. In addition, hydrogen implanted in the Pb(Zr,Ti)O lattice can inhibit the switching of Ti/Zr by binding with oxygen. The recovery at 350 °C indicates that the polarization decrease created by hydrogen implantation is relatively minor and suggests that the degradation mechanism is due to implanted hydrogen in the Pb(Zr,Ti)O films. © 2006 American Institute of Physics.

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