Hydrogen-implant-induced polarization loss and recovery in lrO /Pb(Zr,Ti)O/Pt capacitors
Journal of Applied Physics, ISSN: 0021-8979, Vol: 99, Issue: 12
2006
- 12Citations
- 5Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Hydrogen was implanted into IrO (200 nm)/Pb(Zr,Ti)O /Pt thin film capacitors at 26 keV with a flux of 2× 10 H ions/cm and also implanted at 20 keV with a flux of 1 ×10 H ions/cm into IrO (50 nm)/Pb(Zr,Ti)O/Pt. The implanted samples showed a net loss in polarization of 20 μC/cm as a result of the hydrogen implant and the hysteresis loop was severely distorted. Transmission electron microscopy cross-sectional images and microdiffraction patterns showed no physical damage in the Pb(Zr,Ti)O after implanting. Secondary ion mass spectroscopy (SIMS) analysis revealed that a maximum concentration of H of 4 × 10 atom/cm after implantation. Permittivity measurements also showed a decrease after implantation of 20% or more. After annealing the implanted samples in air at 350 °C for 5 min the remanent polarization loop and dielectric properties were restored. SRIM-2003 software simulation of the implanted hydrogen revealed that 1% oxygen vacancies are created by implanting using these implant conditions. In addition, hydrogen implanted in the Pb(Zr,Ti)O lattice can inhibit the switching of Ti/Zr by binding with oxygen. The recovery at 350 °C indicates that the polarization decrease created by hydrogen implantation is relatively minor and suggests that the degradation mechanism is due to implanted hydrogen in the Pb(Zr,Ti)O films. © 2006 American Institute of Physics.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know