Hall effect measurements using polycrystalline pentacene field-effect transistors on plastic films
Applied Physics Letters, ISSN: 0003-6951, Vol: 88, Issue: 25
2006
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Article Description
We performed Hall effect measurements using polycrystalline pentacene field-effect transistors manufactured on plastic base films. The field-effect mobility is 0.4 cm/V s in a linear regime. We detected a change in the Hall voltage, which linearly increased with the magnetic field (B) and reached 700 μV at B=9 T. From the evaluations, the Hall mobility was 0.4±0.1 cm/V s. Furthermore, we observed that the inverse of the Hall constant was two or three Limes larger than the amount of charge estimated from the gate voltage, indicating the importance of hopping transport between polycrystalline grain boundaries. © 2006 American Institute of Physics.
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