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Hopping conductivity in p-CuGaSe films

Journal of Applied Physics, ISSN: 0021-8979, Vol: 100, Issue: 6
2006
  • 16
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Metrics Details

  • Citations
    16
    • Citation Indexes
      16
  • Captures
    16

Article Description

The results of resistivity measurements on p-type CuGaSe films are presented and analyzed within the framework of different hopping conductivity models. Both the Mott [N. Mott and E. A. Davies, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979); N. F. Mott, Metal-Insulator Transitions (Taylor & Francis, London, 1990)] and the Shklovski-Efros [Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984)] regimes of variable-range hopping are observed. The values of the characteristic and transition temperatures as well as the complete set of parameters describing the properties of the localized holes (the localization radius, the dielectric permeability, the width of the Coulomb gap, and the values of density of states at the Fermi level) are determined. © 2006 American Institute of Physics.

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