Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern
Applied Physics Letters, ISSN: 0003-6951, Vol: 89, Issue: 19
2006
- 27Citations
- 17Captures
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Article Description
The enhancement in light extraction efficiency from a periodic micron-scale rugged surface pattern on Si quantum dot light-emitting-diode (Si-QD LED) structures was investigated, both numerically and experimentally. Micron-scale rugged surface patterns were fabricated on the top layer of the Si-QD LED to increase the extraction of light from the active layer. The optimum light extraction condition for a Si-QD LED corresponded to a pattern size/period ratio of ∼0.7. In experiments, the luminescent powers of a Si-QD LED with/without micron-scale surface patterns increase linearly with current density, and the efficiency of light extraction was enhanced by a factor of 2.8. © 2006 American Institute of Physics.
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