Thin-film transistor realized with a combined active layer
Applied Physics Letters, ISSN: 0003-6951, Vol: 89, Issue: 24
2006
- 4Citations
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Article Description
A combined active layer thin-film transistor is reported. The effective channel length of this planar thin-film transistor is only 1.2 μm, and no high resolution lithography technology is necessary for the fabrication processes. A discontinuous metal film is deposited on the semiconductor layer to form the combined active layer. The on-state current for a 3 mm channel width is about 31 mA, which is sufficient for most flat panel display devices. © 2006 American Institute of Physics.
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