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Room-temperature magnetoresistance in magnetic tunnel junctions with Fe3 O4 electrode

Journal of Applied Physics, ISSN: 0021-8979, Vol: 101, Issue: 9
2007
  • 14
    Citations
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  • 16
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Metrics Details

  • Citations
    14
    • Citation Indexes
      14
  • Captures
    16

Conference Paper Description

We report on the fabrication and spin-dependent transport properties of epitaxial Fe3 O4 MgO Co75 Fe25 magnetic tunnel junctions (MTJs) grown on sapphire (00.1) substrates. The MTJs showed magnetoresistance (MR) ratios ranging from -14% to 10% at room temperature and a somewhat scattered resistance-area product (RA) ranging from 7× 107 to 3× 1010 μ m2. The relationship between MR ratio and RA revealed a tendency for the MR ratio to go from positive to negative as RA increases. Because MTJs with fewer imperfections should show a higher RA, the negative MR ratio is considered to be intrinsic, and the electron transport via imperfections results in a reversal in the sign of the MR ratio. © 2007 American Institute of Physics.

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