Nonlinear transport below T for lateral nanoconstrictions realized in a 100 nm GaMnAs epifilm
Applied Physics Letters, ISSN: 0003-6951, Vol: 91, Issue: 12
2007
- 2Citations
- 4Captures
Metric Options: Counts1 Year3 YearSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Electrical transport across lateral geometrical nanoconstrictions realized in 100 nm thick GaMnAs epifilms is studied. The constrictions are patterned with the aid of chemical etching techniques, as opposed to plasma-assisted methods. Transport behavior across the constrictions, where domain walls can be formed and pinned, changes from Ohmic to non-Ohmic below temperatures corresponding to epifilm TC for junctions with high resistances. Magnetoresistance measurements across such junctions qualitatively show similar behavior to unpatterned epifilms attributable to anisotropic magnetoresistance. The experimental IV curves are in good agreement with theoretical models accounting for spin flop across a region of high resistance. © 2007 American Institute of Physics.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know