Realization of n- Zn1-x Mgx Oi-ZnOSi Ox n+ -Si heterostructured n-i-n light-emitting diodes by low-cost ultrasonic spray pyrolysis
Applied Physics Letters, ISSN: 0003-6951, Vol: 91, Issue: 26
2007
- 30Citations
- 18Captures
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Article Description
n- Zn1-x Mgx Oi-ZnOSi Ox n+ -Si heterostructured light-emitting diodes have been demonstrated by low-cost ultrasonic spray pyrolysis. The current-voltage measurement shows typical characteristics of a back-to-back diode due to the double Schottky barriers induced by the Si Ox layer. Blue electroluminescence peaking at 460 nm was observed at room temperature when a positive bias of ∼4 V was applied on the Si substrate. The electroluminescence is suggested to be dominated by the donor-acceptor pair recombination in the i-ZnO layer, where the holes were injected from the valence band of Si into the acceptor level of i-ZnO. © 2007 American Institute of Physics.
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