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Anisotropic mobility in large grain size solution processed organic semiconductor thin films

Applied Physics Letters, ISSN: 0003-6951, Vol: 92, Issue: 6
2008
  • 119
    Citations
  • 0
    Usage
  • 93
    Captures
  • 0
    Mentions
  • 0
    Social Media
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Metrics Details

  • Citations
    119
    • Citation Indexes
      119
  • Captures
    93

Article Description

The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films. © 2008 American Institute of Physics.

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