PlumX Metrics
Embed PlumX Metrics

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with AlO SiO films

Applied Physics Letters, ISSN: 0003-6951, Vol: 92, Issue: 25
2008
  • 40
    Citations
  • 0
    Usage
  • 15
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    40
    • Citation Indexes
      40
  • Captures
    15

Article Description

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with AlO SiO (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 AW at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. © 2008 American Institute of Physics.

Bibliographic Details

Feng Zhang; Weifeng Yang; Huolin Huang; Xiaping Chen; Zhengyun Wu; Huili Zhu; Hongji Qi; Jianke Yao; Zhengxiu Fan; Jianda Shao

AIP Publishing

Physics and Astronomy

Provide Feedback

Have ideas for a new metric? Would you like to see something else here?Let us know