Comparative Sb and As segregation at the InP on GaAsSb interface
Applied Physics Letters, ISSN: 0003-6951, Vol: 93, Issue: 12
2008
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Article Description
We study the formation of the InP on GaAsSb interface grown by molecular beam epitaxy at 450 °C. Using angle resolved x-ray photoemission spectroscopy (XPS), we show that Sb strongly segregates whereas As does not, leading to a Sb-rich InP surface. Similarly, XPS spectra recorded on air-exposed samples reveal oxidized Sb but no oxidized As. We perform a quantitative analysis and determine a Sb segregation coefficient very near to 1. This result is in good agreement with previous reflectance anisotropy spectroscopy observations on the same interface. © 2008 American Institute of Physics.
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