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Atomic layer structure of manganese atoms on wurtzite gallium nitride (000 1-)

Applied Physics Letters, ISSN: 0003-6951, Vol: 93, Issue: 18
2008
  • 9
    Citations
  • 0
    Usage
  • 17
    Captures
  • 0
    Mentions
  • 0
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Metrics Details

  • Citations
    9
    • Citation Indexes
      9
  • Captures
    17

Article Description

Submonolayer quantities of Mn are deposited on wurtzite GaN (000 1-). The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3× reconstruction along [10 1- 0], but only 1× along [11 2- 0]. Diffraction analysis shows that the 3× streak intensity is maximized at ≈0.86 monolayer of Mn deposition. The results indicate that Mn forms linear chains along the [10 1- 0] direction with a spacing of 3a/2 along chains and 3a/2 between chains. Correcting the peak coverage for sticking coefficient and accounting for the observed periodicities, a 3×3-R30° model, consisting of 2/3 monolayer of Mn atoms, is proposed. © 2008 American Institute of Physics.

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