Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method
Journal of Applied Physics, ISSN: 0021-8979, Vol: 105, Issue: 9
2009
- 26Citations
- 25Captures
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Article Description
Nonlinear optical properties of Si nanocrystals (Si-ncs) doped SiO2 prepared by a cosputtering method were studied by z -scan technique in a femtosecond regime at around 1.6 eV. The nonlinear refractive index (n2) and nonlinear absorption coefficient (Β) were strongly enhanced compared to those of bulk Si and found to be about ∼2× 10-13 cm2 /W and ∼0.8 cm/GW, respectively. In the photon energy region from 1.48 to 1.65 eV, the n2 and Β spectra followed the absorption spectra and no enhancement was observed in the band-edge photoluminescence region. In the diameter range of 2.7-5.4 nm, the size dependence of n2 coincided well with that calculated by a pseudopotential approach, suggesting that the discrete energy states of Si-ncs are responsible for the observed enhanced optical nonlinearity. © 2009 American Institute of Physics.
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