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In situ studies of AlO and HfO dielectrics on graphite

Applied Physics Letters, ISSN: 0003-6951, Vol: 95, Issue: 13
2009
  • 65
    Citations
  • 0
    Usage
  • 52
    Captures
  • 0
    Mentions
  • 0
    Social Media
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Metrics Details

  • Citations
    65
    • Citation Indexes
      64
    • Patent Family Citations
      1
      • Patent Families
        1
  • Captures
    52

Article Description

Deposition of AlO and HfO dielectrics on graphite is studied as a route to the formation of a high- κ dielectric on graphene. Electron beam evaporation of metal Al and Hf is followed by a separate oxidation step. Reactive e-beam deposition of HfO by introduction of O to the deposition chamber is also demonstrated as an alternative to the two-step metal deposition and oxidation approach. We employ in situ x-ray photoelectron spectroscopy to study reactions between the substrate and deposited film and ex situ atomic force microscopy to examine the dielectric film morphology. © 2009 American Institute of Physics.

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