In situ studies of AlO and HfO dielectrics on graphite
Applied Physics Letters, ISSN: 0003-6951, Vol: 95, Issue: 13
2009
- 65Citations
- 52Captures
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Article Description
Deposition of AlO and HfO dielectrics on graphite is studied as a route to the formation of a high- κ dielectric on graphene. Electron beam evaporation of metal Al and Hf is followed by a separate oxidation step. Reactive e-beam deposition of HfO by introduction of O to the deposition chamber is also demonstrated as an alternative to the two-step metal deposition and oxidation approach. We employ in situ x-ray photoelectron spectroscopy to study reactions between the substrate and deposited film and ex situ atomic force microscopy to examine the dielectric film morphology. © 2009 American Institute of Physics.
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