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Photoemission study of negative-electron-affinity GaP

Journal of Applied Physics, ISSN: 0021-8979, Vol: 50, Issue: 6, Page: 4184-4189
1979
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Article Description

The optical absorption coefficient and photoemissive quantum yield were measured for liquid-phase-epitaxial GaP layers containing 2% of indium. The transport properties of photogenerated electrons in NEA GaP was analyzed by the two-valley diffusion model of X and L conduction bands and compared with experimental results. From the results of the analysis, diffusion lengths and escape probabilities were determined for NEA GaP with net acceptor concentrations of 2.03×10 to 3.5×10/cm.

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