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Surface passivation of n -type Czochralski silicon substrates by thermal- SiO2 /plasma-enhanced chemical vapor deposition SiN stacks

Applied Physics Letters, ISSN: 0003-6951, Vol: 96, Issue: 3
2010
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Metrics Details

  • Citations
    57
    • Citation Indexes
      57
  • Captures
    69

Article Description

The surface passivation properties of thermal- SiO2 /plasma-enhanced chemical vapor deposition SiN stacks on 2.5 Ω cm n -type Czochralski silicon substrates have been investigated. By annealing these stacks in air we achieve surface recombination velocities (SRV) lower than 2.4 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration. We also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2 /SiN stacks after storage in the dark for several weeks. © 2010 American Institute of Physics.

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