Impact ionization of electrons in silicon (steady state)
Journal of Applied Physics, ISSN: 0021-8979, Vol: 54, Issue: 9, Page: 5139-5144
1983
- 167Citations
- 40Captures
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Article Description
Monte Carlo simulations of electron impact ionization in silicon are presented which include the pseudopotential band structure as well as collision broadening and higher order effects in the electron phonon interaction. Conduction in the two lowest conduction bands of silicon is considered. We also present new results for the impact ionization probability and deformation potential constants which are obtained by comparing our theory with a variety of experimental results.
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