Flexible picene thin film field-effect transistors with parylene gate dielectric and their physical properties
Applied Physics Letters, ISSN: 0003-6951, Vol: 96, Issue: 11
2010
- 43Citations
- 69Captures
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Article Description
Flexible picene thin film field-effect transistors (FETs) have been fabricated with parylene gate dielectric on polyethylene terephthalate substrates. The picene thin film FETs show p-channel output/transfer characteristics and the field-effect mobility μ reaches ∼1 cm V-1 s-1 in vacuum. The FET shows a clear O gas sensing effect and negligible hysteresis in the transfer curves, indicating a possible application of the transistor as O selective gas sensor. Furthermore, it has been found that the parylene gate dielectric can eliminate a reduction in on-state drain current caused by continuous bias-voltage application which is observed if a SiO gate dielectric is used. © 2010 American Institute of Physics.
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