Growth and surface properties of CuInSe
Journal of Applied Physics, ISSN: 0021-8979, Vol: 60, Issue: 11, Page: 4030-4032
1986
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Article Description
It has been found that CuInSe polycrystalline material suitable for photoelectrochemical cells can be produced from low grade In, Se, and Cu. Low-energy electron diffraction (LEED) measurements on these samples show that well ordered (112) surfaces can be produced after 35 min Ar ion bombardment at ∼8 μA cm, 600 eV, followed by 30 min anneal at temperatures as low as 320°C. Extra LEED spots are visible at some energies, indicating a clean surface but with possible nonstoichiometric areas. No effects of oxygen are observed at exposures up to 326×10 L.
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