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Properties of Fe single-crystal films grown on (100)GaAs by molecular-beam epitaxy

Journal of Applied Physics, ISSN: 0021-8979, Vol: 61, Issue: 7, Page: 2596-2599
1987
  • 369
    Citations
  • 0
    Usage
  • 62
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    369
    • Citation Indexes
      367
    • Policy Citations
      2
      • Policy Citation
        2
  • Captures
    62

Article Description

Single-crystal (100)Fe films 90-330 Å thick have been grown on etch-annealed (100)GaAs substrates by molecular-beam-epitaxy techniques. Ferromagnetic resonance data indicate that the two in-plane 〈110〉 directions are inequivalent and, together with magnetometry data, show that the average film magnetization decreases as the thickness decreases. The inequivalence is attributed to the nature of the interface bonding at a (100) zinc-blende surface. The decreased magnetization is attributed to the formation of FeAs microclusters in the film due to As diffusion which is supported by Auger and electron diffraction studies. In general, the Fe films grown to date on etch-annealed (100)GaAs substrates are significantly inferior to those grown on (110)GaAs.

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