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Composition dependence of band alignment and dielectric constant for HfTiO thin films on Si (100)

Journal of Applied Physics, ISSN: 0021-8979, Vol: 107, Issue: 10
2010
  • 40
    Citations
  • 0
    Usage
  • 20
    Captures
  • 0
    Mentions
  • 0
    Social Media
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Metrics Details

  • Citations
    40
    • Citation Indexes
      40
  • Captures
    20

Article Description

Composition-dependent band alignment and dielectric constant for Hf1-x Ti O thin films on Si (100) have been investigated. It was found with increasing Ti content, the band gap and band offsets (Δ E and Δ E) of Hf1-x Ti O films against Si all decrease and the optimal Ti content in the films should be no higher than 21%, at which Δ E is 1.06 eV. The dielectric constant of the films not only can increase up to 31.3, but show a linear increase with increasing TiO content. Compared with HfO thin film with similar equivalent oxide thickness, low leakage currents were obtained. © 2010 American Institute of Physics.

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