Photoluminescence in strained InGaAs-GaAs heterostructures
Journal of Applied Physics, ISSN: 0021-8979, Vol: 62, Issue: 9, Page: 3898-3901
1987
- 27Citations
- 7Captures
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Article Description
Photoluminescence in strained InGaAs-GaAs single heterostructures, grown by molecular-beam epitaxy, is studied, and the critical layer thickness is determined for a range of In mole fractions. The critical thicknesses are compared with similar values measured on the same layers by double-crystal x-ray diffraction. Both techniques give essentially the same results. The photoluminescence line shapes are discussed for layer thicknesses below and above the critical thickness.
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