A novel method for determining the gap-state profile and its application to amorphous SiGe
Journal of Applied Physics, ISSN: 0021-8979, Vol: 64, Issue: 4, Page: 1964-1973
1988
- 48Citations
- 2Captures
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Article Description
A novel technique has been proposed for determining the density-of-state (DOS) distribution in the energy gap of highly resistive amorphous semiconductors, using amorphous/crystalline heterojunction structures. The technique has been tested and applied to undoped hydrogenated amorphous silicon (a-Si:H) films and silicon-germanium (a-SiGe@B: H) alloy films, covering the optical gap (E) range of 1.3-1.7 eV. For undoped a-Si:H with E=1.7 eV, the peak of the midgap DOS distribution has been located at 0.84 eV below the conduction-band mobility edge, E, with a value of 2×10 cm eV. For undoped a-Si Ge@B: H (E=1.44 eV), the same has been obtained at 0.70 eV below E, with a magnitude of 7×10 cm eV. Those midgap DOS have been found to be correlated with singly occupied dangling bonds, representative of a homogeneous bulk property of the material, unaffected by interface states.
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