Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering
Journal of Applied Physics, ISSN: 0021-8979, Vol: 66, Issue: 2, Page: 666-673
1989
- 39Citations
- 4Captures
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Article Description
Ion backscattering in conjunction with channeling and blocking has been used to study the Ni-SiC(001) system after Ni deposition at room temperature and after annealing up to a temperature of 870 K. Detailed analysis of the energy spectra of backscattered ions reveals morphology and composition on an atomic scale. The results show that up to the Ni coverage studied (14.1×10 Ni atoms/cm) no mixing occurs between Ni and Si or Ni and C at room temperature. At a temperature of 570 K, Ni starts to react with Si and forms a disordered film with a composition close to that of NiSi. Prolonged annealing at temperatures up to 870 K does not result in reaction to Si-richer silicide phases. Upon annealing, C segregates to the surface of the NiSi film to form a layer of graphite.
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