Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe-ZnTe strained-layer superlattices
Journal of Applied Physics, ISSN: 0021-8979, Vol: 66, Issue: 6, Page: 2597-2602
1989
- 41Citations
- 12Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
ZnSe and ZnTe thin films and ZnSe-ZnTe strained-layer superlattices (SLS) have been successfully grown by atomic layer epitaxy (ALE) using molecular-beam epitaxy. The ALE growth of ZnSe and ZnTe was achieved at substrate temperatures between 250 and 350 °C and between 240 and 280 °C, respectively. The Zn, Se, and Te beam intensities necessary to achieve ALE growth were evaluated. Under optimum growth conditions, the surfaces of ZnSe and ZnTe thin films were very specular without any surface structure. Modulation-doped n-type SLSs have been prepared by ALE using Cl as a n-type dopant. The carrier concentration of superlattices grown by ALE (3.8×10 cm ) was three orders of magnitude higher than those of superlattices grown by conventional molecular-beam epitaxy.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know