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Formation of PtSi in the presence of Al and a Cr barrier layer

Journal of Applied Physics, ISSN: 0021-8979, Vol: 66, Issue: 6, Page: 2363-2366
1989
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  • Citations
    3
    • Citation Indexes
      3

Article Description

The effect of Cr as a barrier between PtSi and Al is studied by analyzing the reactions of the Al/Cr/Pt/Si (2000 Å/1000 Å/1000 Å/Si substrate) structures. Electrical measurement shows a rapid rise in sheet resistance after annealing at 400 °C. Structural analysis shows extensive reactions between Al and Cr at such temperatures. The PtSi formed remains little changed until 550 °C, and is converted to PtAl at higher temperatures. The results are compared with those using W, Ti-W, and carbon barriers, and the roles of barrier materials on the stability of the Al/PtSi metallurgy are discussed.

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