Formation of PtSi in the presence of Al and a Cr barrier layer
Journal of Applied Physics, ISSN: 0021-8979, Vol: 66, Issue: 6, Page: 2363-2366
1989
- 3Citations
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Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
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- Citations3
- Citation Indexes3
- CrossRef3
Article Description
The effect of Cr as a barrier between PtSi and Al is studied by analyzing the reactions of the Al/Cr/Pt/Si (2000 Å/1000 Å/1000 Å/Si substrate) structures. Electrical measurement shows a rapid rise in sheet resistance after annealing at 400 °C. Structural analysis shows extensive reactions between Al and Cr at such temperatures. The PtSi formed remains little changed until 550 °C, and is converted to PtAl at higher temperatures. The results are compared with those using W, Ti-W, and carbon barriers, and the roles of barrier materials on the stability of the Al/PtSi metallurgy are discussed.
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