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Observation and characterization of deep donor centers (DX centers) in Si-doped AlAs

Journal of Applied Physics, ISSN: 0021-8979, Vol: 66, Issue: 7, Page: 3042-3046
1989
  • 15
    Citations
  • 0
    Usage
  • 2
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    15
    • Citation Indexes
      15
  • Captures
    2

Article Description

We find the DX centers in Si-doped AlAs for the first time. The activation energy is measured as 0.56 eV from deep level transient spectroscopy (DLTS). The DX centers in n-AlAs exhibit a large capture energy 0.5 eV and a persistent photoconductivity. These properties are similar to those of the DX centers in AlGaAs with x∼0.3. However, the carrier concentration in the DX centers revealed by DLTS is not linearly proportional to Si donor concentration. This result is interpreted by the band structure that the DX center level lies at 30 meV above the X-conduction band (CB) minima and at 150 meV below the L-CB minima. The DX center is found not to be associated with the X-CB minima, but the L-CB minima.

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