Analytical solution for minority-carrier transport in heavily doped semiconductors with position-dependent band structures
Journal of Applied Physics, ISSN: 0021-8979, Vol: 68, Issue: 4, Page: 1710-1713
1990
- 13Citations
- 1Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
An analytical solution for minority-carrier current in a heavily doped semiconductor region with a position-dependent band structure has been presented. The solution is general enough to be valid for both degenerate and nondegenerate semiconductors, and for any kind of doping profile. The accuracy of the solution depends on the accuracy of the minority-carrier lifetime model. Such a model developed in the present investigation agrees closely with available experiments.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know