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Si defect induced Au-Si diffusion size effects

Journal of Applied Physics, ISSN: 0021-8979, Vol: 70, Issue: 11, Page: 6809-6814
1991
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Article Description

Diffusion of gold into silicon crystal has been investigated, taking into account both the dissociative and the kickout mechanisms. Expressions for the determination of critical sample thicknesses and temperatures at which one transfer mechanism substitutes for the other have been derived. Fields of different Au-Si diffusion transfer regime realization are defined.

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