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Calculated electron and hole steady-state drift velocities in lattice matched GaInP and AlGaInP

Journal of Applied Physics, ISSN: 0021-8979, Vol: 71, Issue: 2, Page: 1055-1057
1992
  • 23
    Citations
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  • 9
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    23
    • Citation Indexes
      23
  • Captures
    9

Article Description

We present calculations based on an ensemble Monte Carlo program of the steady-state electron and hole drift velocities in bulk GaIn P and AlGaInP as well as present a list of material parameters for these substances which are of use in the modeling of semiconductor devices made from these material types. The calculations are made including a realistic treatment of both the conduction and valence energy bands based on the k*p method. All of the principal phonon scattering agents are included in our simulation as well.

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