High field characteristics of metal-oxide-semiconductor capacitors with the silicon in inversion
Journal of Applied Physics, ISSN: 0021-8979, Vol: 73, Issue: 8, Page: 3857-3859
1993
- 6Citations
- 2Captures
Metric Options: CountsSelecting the 1-year or 3-year option will change the metrics count to percentiles, illustrating how an article or review compares to other articles or reviews within the selected time period in the same journal. Selecting the 1-year option compares the metrics against other articles/reviews that were also published in the same calendar year. Selecting the 3-year option compares the metrics against other articles/reviews that were also published in the same calendar year plus the two years prior.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Example: if you select the 1-year option for an article published in 2019 and a metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019. If you select the 3-year option for the same article published in 2019 and the metric category shows 90%, that means that the article or review is performing better than 90% of the other articles/reviews published in that journal in 2019, 2018 and 2017.
Citation Benchmarking is provided by Scopus and SciVal and is different from the metrics context provided by PlumX Metrics.
Article Description
Degradation of the gate oxide is often studied by stressing of metal-oxide-semiconductor (MOS) capacitors. Usually the MOS capacitor is stressed in accumulation to avoid the complications due to a voltage drop across the depletion layer if stressed in inversion. High field stressing studies for MOS capacitors with the silicon in inversion are presented in this article. Our observations show that in this mode, silicon properties (mainly minority carrier generation lifetime) play an important role.
Bibliographic Details
Provide Feedback
Have ideas for a new metric? Would you like to see something else here?Let us know