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Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

Journal of Applied Physics, ISSN: 0021-8979, Vol: 73, Issue: 10, Page: 5014-5016
1993
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Article Description

We have measured electron and hole impact ionization coefficients in biaxially strained InGaAs/InAl As (0.44≤x≤0.62, 0.44≤y≤0.62) multiquantum wells for the first time. It is seen that β/α is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band-to-band impact ionization and band-edge discontinuity impact ionization processes.

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