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Valency and type conversion in CuInSe with H plasma exposure: A photoemission investigation

Journal of Applied Physics, ISSN: 0021-8979, Vol: 73, Issue: 12, Page: 8561-8564
1993
  • 12
    Citations
  • 0
    Usage
  • 6
    Captures
  • 0
    Mentions
  • 0
    Social Media
Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    12
    • Citation Indexes
      12
  • Captures
    6

Article Description

The effect of H plasma exposure on CuInSe was studied by synchrotron radiation soft-x-ray photoemission spectroscopy. The low-power H plasma was generated with a commercial electron cyclotron resonance plasma source using pure H with the plasma exposure being performed at 200°C. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were correlated in order to relate changes in surface chemistry to the electronic structure. These measurements indicate that the H plasma exposure type converts the CuInSe surface to an n-type surface as well as converting the In valency state to an In valency state.

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