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Magnetism and transport properties of α-Mn structure MnGe thin film

Journal of Applied Physics, ISSN: 0021-8979, Vol: 109, Issue: 7
2011
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  • 27
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Metrics Details

  • Citations
    8
    • Citation Indexes
      8
  • Captures
    27

Conference Paper Description

We have newly synthesized the -Mn structured MnGe thin films on GaAs(001) substrate. The single phase MnGe film was grown at a growth temperature of 150 C, while the secondary phase was observed above a growth temperature of 250 C. The MnGe films exhibited ferrimagnetism with a Curie temperature of 334 K. The saturation magnetizations were 255.9 and 313.8 emu/cm and the corresponding coercive fields were 453 and 1166 Oe at 10 K for the samples grown at 150 and 300 C, respectively. The ferrimagnetism was confirmed by the anomalous Hall effect data. © 2011 American Institute of Physics.

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