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Schottky and ohmic contacts of Pd on p-type GaAs distinguished with hydrogen

Journal of Applied Physics, ISSN: 0021-8979, Vol: 76, Issue: 7, Page: 4205-4208
1994
  • 3
    Citations
  • 0
    Usage
  • 12
    Captures
  • 0
    Mentions
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    3
    • Citation Indexes
      3
  • Captures
    12

Article Description

Contacts of Pd on p-type GaAs with a native oxide layer between them reveal ohmiclike behavior in air or vacuum at room temperature. This behavior is similar to that of contacts annealed at 450°C for 5 min. To relate the interface electrical properties of the two contacts to their interfacial structures, we propose to measure current-voltage (I-V) and capacitance-voltage (C-V) characteristics in a hydrogen ambient. We show that these two contacts can be distinguished with atomic hydrogen. This method was confirmed with I-V and C-V measurements at low temperatures.

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