Si(001)2×1 gas-source molecular-beam epitaxy from Si H: Growth kinetics and boron doping
Journal of Applied Physics, ISSN: 0021-8979, Vol: 76, Issue: 3, Page: 1884-1888
1994
- 86Citations
- 16Captures
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Article Description
The growth rates R of Si films deposited on Si(001)2×1 from SiH by gas-source molecular-beam epitaxy were determined as a function of temperature T (500-950°C) and impingement flux JH (0.3-7.7×10 cm s). R (T,J H) curves were well described using a model, with no fitting parameters, based upon dissociative SiH chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from Si monohydride. The zero-coverage SiH reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036, more than two orders of magnitude higher than that for SiH. B doping concentrations (C=5×10-3×10 cm) from BH increased linearly with increasing flux ratio JH/JH at constant T and decreased exponentially with 1/T at constant JH/JH. Secondary ion mass spectrometry analyses of modulation-doped samples revealed sharp profiles with no detectable B segregation. Hole mobilities in uniformly doped samples were equal to bulk values.
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