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Highly air-stable electrical performance of graphene field effect transistors by interface engineering with amorphous fluoropolymer

Applied Physics Letters, ISSN: 0003-6951, Vol: 98, Issue: 15
2011
  • 46
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  • 41
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Metrics Details

  • Citations
    46
    • Citation Indexes
      46
  • Captures
    41

Article Description

Excellent stability on the electrical characteristics of graphene field effect transistors in an air ambient is achieved by inserting an amorphous fluoropolymer between the graphene channel and SiO gate dielectric. The interface engineering exploits the highly water repellent property of the fluoropolymer stemming from high hydrophobicity and low moisture permeation, and results in negligible hole doping of graphene from absorption of water molecules. In addition, the graphene field effect transistors with the fluoropolymer/ SiO gate dielectric shows superior performances including negligible VDirac hysteresis and highly stable carrier mobility, which are important characteristics for analog rf device applications. © 2011 American Institute of Physics.

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