1.3 μm InAsP compressively strained multiple-quantum-well lasers for high-temperature operation
Journal of Applied Physics, ISSN: 0021-8979, Vol: 77, Issue: 8, Page: 4119-4121
1995
- 29Citations
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Article Description
High-temperature operation of InAsP-based laser diodes at 1.3 μm has been realized according to guidelines of a large conduction-band-offset material (ΔE) with a large optical confinement factor (Γ). Using photoluminescence excitation spectroscopy measurements, it was found that the conduction-band offset of InAsPP/InGaAsP is the half of the band-gap energy difference (0.5 ΔE), which is larger than that of conventional quaternary material systems. A strain-compensation growth technique enabled the fabrication of a large number of wells for large Γ. For broad-area laser diodes, the maximum operating temperature increased as the number of wells increased from 4 to 15. In buried heterostructure lasers with ten wells, with high-reflectivity coating on both facets, continuous-wave lasing operation at temperatures up to 150°C was achieved with a characteristic temperature of 59 K (30
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