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Effects of metal contacts and dopants on the performance of ZnO-based memristive devices

Journal of Applied Physics, ISSN: 0021-8979, Vol: 110, Issue: 1
2011
  • 32
    Citations
  • 0
    Usage
  • 37
    Captures
  • 0
    Mentions
  • 0
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Metrics Details

  • Citations
    32
    • Citation Indexes
      32
  • Captures
    37

Article Description

We have performed a detailed investigation of the fabrication and switching characteristics of ZnO-based memristive devices. The effects of doping and various metal contacts have been studied. It is observed that, with the use of Al metal contacts and ZnO:Al layers, relatively high R/R ratios of 200 can be achieved. Much improved device stability and reproducibility, on the other hand, can be realized by using either nominally undoped or Mg-doped ZnO memristive layers. The experimental results may be well explained by an oxygen vacancy formation and migration model. The present work represents an important step in realizing high performance ZnO-based memristive devices for future nonvolatile memory applications. © 2011 American Institute of Physics.

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