ZnMgSeS/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A orientation
Journal of Applied Physics, ISSN: 0021-8979, Vol: 78, Issue: 4, Page: 2851-2853
1995
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Article Description
Although low threshold II-VI blue/green lasers have been demonstrated, the device lifetime for these lasers remains an important issue. It has been observed that the dark line defects, which are caused by stacking faults or point defects, are related to the degradation of the lasers. In order to improve the reliability of the laser, we initiated studies of molecular beam epitaxial growth and device characteristics of II-VI quantum well lasers grown in the (511)A orientation. The photoluminescence spectra of (511)A epilayers always exhibited stronger and sharper emission peaks than their (100) counterparts, which indicated that less defects are incorporated in the (511)A epilayers. Room-temperature threshold current densities of 1 kA/cm have been obtained. The performance of these lasers merits further studies on the use of (511)A as a possible solution to the reliability problem of II-VI lasers. © 1995 American Institute of Physics.
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