CoSi/SiGe/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion
Journal of Applied Physics, ISSN: 0021-8979, Vol: 78, Issue: 12, Page: 7063-7069
1995
- 37Citations
- 9Captures
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Article Description
The microstructure and microchemistry of CoSi/Si Ge/Si(001) heterostructures, in which the Si Ge layers were grown by molecular-beam epitaxy (MBE) and the silicides formed by different postdeposition reaction paths, were investigated using a combination of high-resolution cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, and secondary-ion-mass spectrometry. In two of the three sample configurations investigated, Co was deposited either (S1) directly on a strained SiGe layer or (S2) on a sacrificial MBE Si overlayer on SiGe . In the third sample configuration (S3) SiGe was grown on a Si(001) substrate containing a buried ion-implanted CoSi layer. Only in sample configuration S2 was it possible to obtain a fully strained nearly defect-free CoSi/Si Ge structure. A high density of threading dislocations, corresponding to ≊60% relaxation at the Si Ge/Si interface, was observed in S1 while S3, in addition to the dislocations, exhibited a pronounced faceting at the CoSi /Si interface. © 1995 American Institute of Physics.
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