On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications
Applied Physics Letters, ISSN: 0003-6951, Vol: 98, Issue: 26
2011
- 24Citations
- 39Captures
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Article Description
InO-based amorphous oxide channel materials are of increasing interest for thin film transisitor applications due, in part, to the remarkable stability of this class of materials amorphous structure and electronic properties. We report that this stability is degraded in the presence of Ti, which is widely used as a contact and/or adhesion layer. A cross-sectional transmission electron microscopy analysis, supported by glancing incident angle x-ray and selected area diffraction examination, shows that amorphous indium zinc oxide in contact with Ti undergoes crystallization to the bixbyite phase and reacts to form the rutile phase of TiO at a temperature of 200 °C. A basic thermodynamic analysis is presented and forms the basis of a model that describes both the crystallization and the resistivity decrease. © 2011 American Institute of Physics.
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