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Analysis of untreated cross sections of Cu(In,Ga)Se thin-film solar cells with varying Ga content using Kelvin probe force microscopy

Applied Physics Letters, ISSN: 0003-6951, Vol: 99, Issue: 4
2011
  • 13
    Citations
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  • 27
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Metric Options:   Counts1 Year3 Year

Metrics Details

  • Citations
    13
    • Citation Indexes
      13
  • Captures
    27

Article Description

The potential distribution of the Cu(In,Ga)Se/CdS/ZnO layer structure on untreated cross sections of Cu(In,Ga)Se thin-film solar cells are analyzed by Kelvin probe force microscopy under ambient conditions. The potential differences between the Cu(In,Ga)Se absorber and the ZnO window layer are systematically investigated, providing direct evidence for a Fermi energy shifting in Cu(In,Ga)Se absorbers with different Ga content. © 2011 American Institute of Physics.

Bibliographic Details

Zhenhao Zhang; Xiaochen Tang; Uli Lemmer; Michael Powalla; Hendrik Hölscher; Wolfram Witte; Oliver Kiowski

AIP Publishing

Physics and Astronomy

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