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Resistivity and L-edge absorption studies in valence fluctuation system CeNiSi

Journal of Applied Physics, ISSN: 0021-8979, Vol: 79, Issue: 8 PART 2B, Page: 6347-6348
1996
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Article Description

From our x-ray (L-edge) absorption (XAS) investigations of CeNiSi, we show that Ce-valence is temperature dependent; it is 3.07 and 3.11 at 280 and 8 K, respectively. We also report on our resistivity measurements of two related materials CeRNiSi (R=Y, Gd and x = 0.1). Absence of any qualitative difference in the resistivities of these two samples suggests that the enhancement of resistivity at low temperature on introduction of impurity atoms is due to Kondo hole scattering implying that CeNiSi is a concentrated Kondo system. © 1996 American Institute of Physics.

Bibliographic Details

Chandan Mazumdar; B. D. Padalia; R. Nagarajan; L. C. Gupta; R. Vijayaraghavan; C. Godart

AIP Publishing

Physics and Astronomy

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