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Third-order nonlinearity in silicon beyond 2350 nm

Applied Physics Letters, ISSN: 0003-6951, Vol: 99, Issue: 8
2011
  • 41
    Citations
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  • 40
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Metrics Details

  • Citations
    41
    • Citation Indexes
      41
  • Captures
    40

Article Description

Measurement of the Kerr nonlinearity in silicon is reported in the 2350 nm to 2750 nm wavelength range, where three-photon absorption effect is present. The measurements confirm that the Kerr interaction strength is comparable to that in the near-infrared. The measured dispersion trend for the Kerr coefficient is consistent with that obtained using Kramers-Krnig relations. Three-photon absorption was measured, and its effect on the nonlinear figure of merit in silicon appears not to be as restrictive as that of two-photon absorption. The results identify silicon as a promising platform for parametric processes in mid-infrared spectral region. © 2011 American Institute of Physics.

Bibliographic Details

Faezeh Gholami; Sanja Zlatanovic; Aleksandar Simic; Lan Liu; David Borlaug; Nikola Alic; Maziar P. Nezhad; Yeshaiahu Fainman; Stojan Radic

AIP Publishing

Physics and Astronomy

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