Simple measurement of 300 K electron capture cross section for EL2 in GaAs
Journal of Applied Physics, ISSN: 0021-8979, Vol: 80, Issue: 6, Page: 3590-3591
1996
- 16Citations
- 249Usage
- 3Captures
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Metrics Details
- Citations16
- Citation Indexes16
- 16
- CrossRef12
- Usage249
- Downloads241
- Abstract Views8
- Captures3
- Readers3
Article Description
A simple experiment involving only the measurement of dark current I and 1.1 μm photocurrent I in semi-insulating (SI) GaAs allows an accurate determination of the electron capture cross section σ for the important defect EL2 in GaAs. For 45 SI GaAs samples, from 12 different boules, grown by three different techniques, we find that I/I=1.96±0.05 at 300 K. This relationship gives σ=1.4±0.4×10 cm, which is compared to previously estimated values. © 1996 American Institute of Physics.
Bibliographic Details
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0004749427&origin=inward; http://dx.doi.org/10.1063/1.363233; https://pubs.aip.org/jap/article/80/6/3590/2391/Simple-measurement-of-300-K-electron-capture-cross; https://corescholar.libraries.wright.edu/physics/135; https://corescholar.libraries.wright.edu/cgi/viewcontent.cgi?article=1180&context=physics
AIP Publishing
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