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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Applied Physics Letters, ISSN: 0003-6951, Vol: 99, Issue: 16
2011
  • 51
    Citations
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  • 18
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Metrics Details

  • Citations
    51
    • Citation Indexes
      51
  • Captures
    18

Article Description

We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be 1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. © 2011 American Institute of Physics.

Bibliographic Details

Basanta Roul; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Mahesh Kumar; S. B. Krupanidhi; A. T. Kalghatgi; Nitesh Kumar; A. Sundaresan

AIP Publishing

Physics and Astronomy

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